![]() Since MOSFETs can be made with either p-type or n-type semiconductors (PMOS or NMOS logic, respectively), complementary pairs of MOSFETs can be used to make switching circuits with very low power consumption: CMOS (Complementary MOS) logic. MOSFETs can either be manufactured as part of MOS integrated circuit chips or as discrete MOSFET devices (such as a power MOSFET), and can take the form of single-gate or multi-gate transistors. MOSFETs are also cheaper and have relatively simple processing steps, resulting in high manufacturing yield. They also have faster switching speed (ideal for digital signals), much smaller size, consume significantly less power, and allow much higher density (ideal for large-scale integration), compared to BJTs. ![]() MOSFETs are also capable of high scalability, with increasing miniaturization, and can be easily scaled down to smaller dimensions. In a depletion mode MOSFET, voltage applied at the gate can reduce the conductivity from the "normally on" state. In an enhancement mode MOSFET, voltage applied to the gate terminal can increase the conductivity from the "normally off" state. The MOSFET is considered the "workhorse" of the electronics industry.Ī key advantage of a MOSFET is that it requires almost no input current to control the load current, when compared with bipolar junction transistors (BJTs). MOSFET scaling and miniaturization has been driving the rapid exponential growth of electronic semiconductor technology since the 1960s, and enables high-density ICs such as memory chips and microprocessors. It is a compact transistor that has been miniaturised and mass-produced for a wide range of applications, revolutionizing the electronics industry and the world economy, and being central to the digital revolution, silicon age and information age. It is the dominant semiconductor device in digital and analog integrated circuits (ICs), and the most common power device. ![]() It is the basic building block of modern electronics, and the most frequently manufactured device in history, with an estimated total of 13 sextillion ( 1.3 ×10 22) MOSFETs manufactured between 19. Atalla and Dawon Kahng at Bell Labs in 1959, and first presented in 1960. The voltage of the covered gate determines the electrical conductivity of the device this ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The metal–oxide–semiconductor field-effect transistor ( MOSFET, MOS-FET, or MOS FET), also known as the metal–oxide–silicon transistor ( MOS transistor, or MOS), is a type of insulated-gate field-effect transistor that is fabricated by the controlled oxidation of a semiconductor, typically silicon. Heat sink and a discrete MOSFET transistor ![]()
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